IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Fabrication of β-FeSi2 Films on Si(111) Using Solid-Phase Growth Reaction from Fe and FeSi Sources
Katsuaki MOMIYAMAKensaku KANOMATAShigeru KUBOTAFumihiko HIROSE
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2013 Volume E96.C Issue 5 Pages 690-693

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Abstract

We investigated solid-phase growth reactions for the fabrication of β-FeSi2 films from Fe and FeSi sources by reflection high-energy electron diffraction (RHEED). To enhance the interdiffusion of Fe and Si for the growth of β-FeSi2, the use of FeSi instead of pure Fe as the source for the initial deposition was examined. The RHEED observation during the solid phase reaction indicated that the growth temperature was markedly decreased to 390K using the FeSi source. We discuss the reaction mechanism of the solid phase growth of β-FeSi2 from Fe and FeSi sources in this paper.

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© 2013 The Institute of Electronics, Information and Communication Engineers
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