Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory

Woo Young CHOI; Min Su HAN; Boram HAN; Dongsun SEO; Il Hwan CHO

doi:10.1587/transele.E96.C.714

IEICE Transactions on Electronics

Online ISSN : 1745-1353
Print ISSN : 0916-8524

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory

Woo Young CHOI, Min Su HAN, Boram HAN, Dongsun SEO, Il Hwan CHO

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Keywords: nano electro mechanical nonvolatile memory, pull-in voltage

JOURNAL RESTRICTED ACCESS

2013 Volume E96.C Issue 5 Pages 714-717

DOI https://doi.org/10.1587/transele.E96.C.714

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Abstract

A modified modeling of residue effect on nano-electro-mechanical nonvolatile memory (NEMory) is presented for considering wet etching process. The effect of a residue under the cantilever is investigated for the optimization. The feasibility of the proposed model is investigated by finite element analysis simulations.

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