Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy

Daichi TAKEUCHI; Katsunori MAKIHARA; Mitsuhisa IKEDA; Seiichi MIYAZAKI; Hirokazu KAKI; Tsukasa HAYASHI

doi:10.1587/transele.E96.C.718

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy

Daichi TAKEUCHI, Katsunori MAKIHARA, Mitsuhisa IKEDA, Seiichi MIYAZAKI, Hirokazu KAKI, Tsukasa HAYASHI

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Keywords: Si nanocolumnar structure, AFM, current image, electron emission

JOURNAL RESTRICTED ACCESS

2013 Volume E96.C Issue 5 Pages 718-721

DOI https://doi.org/10.1587/transele.E96.C.718

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Abstract

We have fabricated highly-dense Si nano-columnar structures accompanied with Si nanocrystals on W-coated quartz, and characterized their local electrical transport in the thickness direction using atomic force microscopy (AFM) with a conductive cantilever. By applying DC negative bias to the bottomW electrode with respect to a grounded top electrode made of ∼10-nm-thick Au on the sample surface, current images reflecting highly-localized conduction were obtained in both contact and non-contact modes. This result is attributable to electron emission due to quasi-ballistic transport through Si nanocrystals via nanocolumnar structure.

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