The field electron emission characteristics of a p-type Si emitter sharpened by a spirally scanned Ga focused-ion-beam milling process were investigated. Saturated Fowler–Nordheim (F–N) plots, which are unique phenomena of p-type semiconductor emitters, were observed. The slight increase of the emission current in the saturated F–N plots region was discussed in terms of the depletion layer width in which electron generation occurs. The temperature dependence of the field electron emission current was also discussed. The activation energy of carrier generation was determined to be 0.26 eV, ascribable to the surface states that accompany the defects introduced by the Ga ion beam. When the emitter was irradiated by a 650-nm-wavelength laser, the increase in the emission current, i.e., the photoexcited emission current, was observed in the saturated region of the F–N plots. The photoexcited emission current was proportional to the laser intensity.