2015 Volume E98.C Issue 6 Pages 489-495
We present an I/O-size second-order analog to digital converter (ADC) combined with a time-to-digital converter (TDC) and a voltage-to-time converter (VTC). Our proposed VTC is optimized for metal–oxide–metal (MOM) capacitances, and is charged to the MOM capacitances by an input voltage. In a standard 65-nm CMOS process, a signal to noise and distortion ratio (SNDR) of 50 dB (8 bits) is achievable at an input signal frequency of 78 kHz and a sampling rate of 20 MHz, where the respective area and power are 6468 mm2 and 509 μW. The measured maximum integral nonlinearity (INL) of the proposed ADC is -1.41 LSBs. The active area of the proposed ADC is smaller than an I/O buffer. The proposed ADC is useful as an ADC I/O.