IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Recent Progress in Organic Molecular Electronics
Fabrication of Step-Edge Vertical-Channel Organic Transistors by Selective Electro-Spray Deposition
Hiroshi YAMAUCHIShigekazu KUNIYOSHIMasatoshi SAKAIKazuhiro KUDO
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2015 Volume E98.C Issue 2 Pages 80-85

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Abstract

Step-edge vertical channel organic field-effect transistors (SVC-OFETs) with a very short channel have been fabricated by a novel selective electrospray deposition (SESD) method. We propose the SESD method for the fabrication of SVC-OFETs based on a 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) semiconductor layer formed by SESD. In the SESD method, an electric field is applied between the nozzle and selective patterned electrodes on a substrate. We demonstrated that the solution accumulates on the selected electrode pattern by controlling the voltage applied to the electrode.

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© 2015 The Institute of Electronics, Information and Communication Engineers
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