Efficiency Analysis of SiC-MOSFET-Based Bidirectional Isolated DC/DC Converters

Atsushi SAITO; Kenshiro SATO; Yuta TANIMOTO; Kai MATSUURA; Yutaka SASAKI; Mitiko MIURA-MATTAUSCH; Hans Jürgen MATTAUSCH; Yoshifumi ZOKA

doi:10.1587/transele.E99.C.1065

Regular Section

Efficiency Analysis of SiC-MOSFET-Based Bidirectional Isolated DC/DC Converters

Atsushi SAITO, Kenshiro SATO, Yuta TANIMOTO, Kai MATSUURA, Yutaka SASAKI, Mitiko MIURA-MATTAUSCH, Hans Jürgen MATTAUSCH, Yoshifumi ZOKA

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Keywords: circuit simulation, compact model, DC/DC converter, SiC-MOSFET, optimization, conversion efficiency

JOURNAL RESTRICTED ACCESS

2016 Volume E99.C Issue 9 Pages 1065-1070

DOI https://doi.org/10.1587/transele.E99.C.1065

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Abstract

Circuit performance of SiC-MOSFET-based bidirectional isolated DC/DC converters is investigated based on circuit simulation with the physically accurate compact device model HiSIM_HV. It is demonstrated that the combined optimization of the MOSFETs R_on and of the inductances in the transformer can enable a conversion efficiency of more than 97%. The simulation study also verifies that the possible efficiency improvements are diminished due to the MOSFET-performance degradation, namely the carrier-mobility reduction, which results in a limitation of the possible R_on reduction. It is further demonstrated that an optimization of the MOSFET-operation conditions is important to utilize the resulting higher MOSFET performance for achieving additional converter efficiency improvements.

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