IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
300-GHz Amplifier in 75-nm InP HEMT Technology
Hiroshi MATSUMURA, Yoichi KAWANO, Shoichi SHIBA, Masaru SATO, Toshihide SUZUKI, Yasuhiro NAKASHA, Tsuyoshi TAKAHASHI, Kozo MAKIYAMA, Taisuke IWAI, Naoki HARA
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Keywords: InP HEMT, sub millimeter-wave, on-wafer TRL calibration
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2016 Volume E99.C Issue 5 Pages 528-534

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Abstract

We developed a 300-GHz high gain amplifier MMIC in 75-nm InP high electron mobility transistor technology. We approached the issues with accurate characterization of devices to design the amplifier. The on-wafer through-reflect-line calibration technique was used to obtain accurate transistor characteristics. To increase measurement accuracy, a highly isolated structure was used for on-wafer calibration standards. The common source amplifier topology was used for achieving high gain amplification. The implemented amplifier MMIC exhibited a gain of over 25 dB in the 280-310-GHz frequency band.

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© 2016 The Institute of Electronics, Information and Communication Engineers
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