A PN Junction-Current Model for Advanced MOSFET Technologies

Ryosuke INAGAKI; Norio SADACHIKA; Mitiko MIURA-MATTAUSCH; Yasuaki INOUE

doi:10.1587/transfun.E92.A.983

Special Section on Advanced Technologies Emerging Mainly from the 21st Workshop on Circuits and Systems in Karuizawa

A PN Junction-Current Model for Advanced MOSFET Technologies

Ryosuke INAGAKI, Norio SADACHIKA, Mitiko MIURA-MATTAUSCH, Yasuaki INOUE

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Keywords: HiSIM, PN junction current, diode current, surface potential

JOURNAL RESTRICTED ACCESS

2009 Volume E92.A Issue 4 Pages 983-989

DOI https://doi.org/10.1587/transfun.E92.A.983

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Abstract

A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potential-based MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.

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