Abstract
We present a new counter-based Wallace-tree (CBW) 8×8 multiplier. The multiplier’s counters are implemented with a new hybrid full adder (FA) cell, which is based on the transmission gate (TG) technique. The proposed FA, TG-based AND gate, and hybrid half adder (HA) generate M:3 (4≤M≤7) digital counters with the ability to save at least 50% area occupation. Simulations by 90 nm technology prove the superiority of the proposed FA and digital counters under different conditions over the state-of-the-art designs. By using the proposed cells, the CBW multiplier exhibits high driving capability, low power consumption, and high speed. The CBW multiplier has a 0.0147 mm2 die area in a pad. The post-layout extraction proves the accuracy of experimental implementation. An image blending mechanism is proposed, in which a direct interface between MATLAB and HSPICE is used to evaluate the presented CBW multiplier in image processing applications. The peak signal-to-noise ratio (PSNR) and structural similarity index metric (SSIM) are calculated as image quality parameters, and the results confirm that the presented CBW multiplier can be used as an alternative to designs in the literature.
摘要
提出一种新的基于计数器的华莱士树(CBW)8×8乘法器。乘法器的计数器使用基于传输门技术的新型混合全加器单元。所提全加器、基于传输门的与门和混合半加器生成M:3(4≤M≤7)数字计数器, 能够节省至少50%的面积。通过90 nm技术仿真证明所提全加器和数字计数器在不同条件下均优于当前最先进设计。通过使用所提单元, CBW乘法器表现出高驱动、低功耗和高速性能。CBW乘法器在焊盘中的芯片面积为0.0147 mm2。后布局提取证明了实验的准确性。同时提出一种图像融合机制, 其中MATLAB和HSPICE之间的直接接口用于在图像处理应用中评估所提CBW乘法器。峰值信噪比和结构相似性指数度量被用作图像质量参数, 结果证实所提CBW乘法器可以替代文献中的设计。
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Ayoub SADEGHI and Nabiollah SHIRI designed the study. Ayoub SADEGHI, Mahmood RAFIEE, and Mahsa TAHGHIGH processed the data. Ayoub SADEGHI, Nabiollah SHIRI, Mahmood RAFIEE, and Mahsa TAHGHIGH drafted the paper. Nabiollah SHIRI revised and finalized the paper.
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Ayoub SADEGHI, Nabiollah SHIRI, Mahmood RAFIEE, and Mahsa TAHGHIGH declare that they have no conflict of interest.
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Sadeghi, A., Shiri, N., Rafiee, M. et al. An efficient counter-based Wallace-tree multiplier with a hybrid full adder core for image blending. Front Inform Technol Electron Eng 23, 950–965 (2022). https://doi.org/10.1631/FITEE.2100432
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DOI: https://doi.org/10.1631/FITEE.2100432