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An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator

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Abstract

This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors (MOSFETs) with optimized layout in the voltage controlled oscillator (VCO). The model employs a PSP charge model to characterize the bias-dependent extrinsic capacitance instead of numerical functions with strong non-linearity. The simulation convergence is greatly improved by this method. An original scheme is developed to extract the parameters of the PSP charge model based on S-parameters measurement. The interconnection parasitics of the cross-coupled MOSFETs are modeled based on vector fitting. The model is verified with an LC VCO design, and exhibits excellent convergence during simulation. The results show improvements as high as 60.5% and 61.8% in simulation efficiency and accuracy, respectively, indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency (RF) circuit design.

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Authors and Affiliations

  1. Institute of VLSI Design, Zhejiang University, Hangzhou, 310027, China

    Li-heng Lou

  2. MOE Key Laboratory of RF Circuits and Systems, Hangzhou Dianzi University, Hangzhou, 310018, China

    Li-heng Lou, Ling-ling Sun, Jun Liu & Hai-jun Gao

Authors
  1. Li-heng Lou
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  2. Ling-ling Sun
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  3. Jun Liu
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  4. Hai-jun Gao
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Corresponding author

Correspondence to Ling-ling Sun.

Additional information

Project supported by the National Basic Research Program (973) of China (No. 2010CB327403) and the National Natural Science Foundation of China (Nos. 61001066 and 61102027)

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Lou, Lh., Sun, Ll., Liu, J. et al. An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator. J. Zhejiang Univ. - Sci. C 14, 205–213 (2013). https://doi.org/10.1631/jzus.C1200268

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  • DOI: https://doi.org/10.1631/jzus.C1200268

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