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Flash read disturb management using adaptive cell bit-density with in-place reprogramming | IEEE Conference Publication | IEEE Xplore

Flash read disturb management using adaptive cell bit-density with in-place reprogramming


Abstract:

Read disturbance is a circuit-level noise induced by flash read operations. Read refreshing employs data migration to prevent read disturbance from corrupting useful data...Show More

Abstract:

Read disturbance is a circuit-level noise induced by flash read operations. Read refreshing employs data migration to prevent read disturbance from corrupting useful data. However, it costs frequent block erasure under read-intensive workloads. Inspired by software-controlled cell bit-density, we propose to reserve selected threshold voltage levels as guard levels to extend the tolerance of read disturbance. Blocks with guard levels have a low cell bit-density, but they can store frequently read data without frequent read refreshing. We further propose to convert a high-density block into a low-density one using in-place reprogramming to reduce the need for data migration. Our approach reduced the number of blocks erased due to read refreshing by up to 85% and the average read response time by up to 22%.
Date of Conference: 19-23 March 2018
Date Added to IEEE Xplore: 23 April 2018
ISBN Information:
Electronic ISSN: 1558-1101
Conference Location: Dresden, Germany

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