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Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode | IEEE Conference Publication | IEEE Xplore

Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode

Publisher: IEEE

Abstract:

In this work, different mechanisms that could cause degradation of the ideality factor in Al/Ge Schottky diodes on Si substrate are examined. Measured I-V characteristics...View more

Abstract:

In this work, different mechanisms that could cause degradation of the ideality factor in Al/Ge Schottky diodes on Si substrate are examined. Measured I-V characteristics of Schottky diodes have been fitted by the model of the diode developed in TCAD environment. The effects of Shockley-Read-Hall recombination parameters of epitaxial Ge on the I-V characteristics are simulated. The impact of interface traps on both Al/Ge and Ge/Si interfaces, as well as the effect of a buffer oxide layer on Al/Ge interface are analyzed by simulations providing a possible explanation for a degraded ideality factor in Al/Ge-on-Si Schottky diodes.
Date of Conference: 28 September 2020 - 02 October 2020
Date Added to IEEE Xplore: 06 November 2020
ISBN Information:
Electronic ISSN: 2623-8764
Publisher: IEEE
Conference Location: Opatija, Croatia

References

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