Abstract:
The massive scaling of semiconducting devices is still the most favorable way to enhance device performance to this day. This leads to emerging ultra low power devices wi...Show MoreMetadata
Abstract:
The massive scaling of semiconducting devices is still the most favorable way to enhance device performance to this day. This leads to emerging ultra low power devices with channel lengths down to 14 nm [1]. In this small dimensions the discretization of doping profiles gains influence on the device current, namely random dopant fluctuations (RDF). Therefore, the topic of variability in terms of fabricating these devices is getting more and more important. The simulate on analysis in this paper should give a deeper insight on the variability problems emerging in this new dimension regimes regarding doping discretization and fabrication tolerances. An improved model is introduced which allows an estimation of the RDF-based threshold voltage deviation σvth for MOSFET devices. The simulations are done using randomized profiles with the FEM-Simulator TCAD Sentaurus.
Published in: 2017 MIXDES - 24th International Conference "Mixed Design of Integrated Circuits and Systems
Date of Conference: 22-24 June 2017
Date Added to IEEE Xplore: 10 August 2017
ISBN Information: