Abstract:
We demonstrate an efficient MZI EO modulator prepared in the PZT thin-film based on the epitaxial spin-on technique. The half-wave-voltage length product as low as 2.0 V·...Show MoreMetadata
Abstract:
We demonstrate an efficient MZI EO modulator prepared in the PZT thin-film based on the epitaxial spin-on technique. The half-wave-voltage length product as low as 2.0 V·cm (C-band) and 1.6 V·cm (O-band) are achieved.
Date of Conference: 03-06 July 2022
Date Added to IEEE Xplore: 17 August 2022
ISBN Information: