Abstract:
We developed a Ge/Si electro-absorption modulator with a record-high 3-dB bandwidth beyond 110 GHz. 224, 240 and 280 Gbit/s PAM-4 eye diagrams with the TDECQ of 1.79, 2.3...Show MoreMetadata
Abstract:
We developed a Ge/Si electro-absorption modulator with a record-high 3-dB bandwidth beyond 110 GHz. 224, 240 and 280 Gbit/s PAM-4 eye diagrams with the TDECQ of 1.79, 2.35 and 3.33 dB are experimentally obtained, respectively.
Date of Conference: 05-09 March 2023
Date Added to IEEE Xplore: 19 May 2023
Print on Demand(PoD) ISBN:979-8-3503-1229-4
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