In0.52Al0.48As Based Single Photon Avalanche Diodes with Multiple M-Layers for High-Efficiency and Fast Temporal Responses | IEEE Conference Publication | IEEE Xplore

In0.52Al0.48As Based Single Photon Avalanche Diodes with Multiple M-Layers for High-Efficiency and Fast Temporal Responses


Abstract:

Multiple multiplication-layers SPADs with excellent performances in terms of high-efficiency (>74%), neat impulse response time (101ps), and short hold-off time (83ns@<1%...Show More

Abstract:

Multiple multiplication-layers SPADs with excellent performances in terms of high-efficiency (>74%), neat impulse response time (101ps), and short hold-off time (83ns@<1% afterpulsing) can be achieved simultaneously with a simple passive quenching circuit under gated-mode operations.
Date of Conference: 05-09 March 2023
Date Added to IEEE Xplore: 19 May 2023
Print on Demand(PoD) ISBN:979-8-3503-1229-4
Conference Location: San Diego, CA, USA

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