A 1500x ILRS/IHRS with a high cell current of ~100 nA/ cell (J = 83 A/cm²) is achieved by antiferroelectric (AFE) vertical ferroelectric tunnel junctions (V-FTJs) that demonstrates multilevel, a self-rectifying rate > 1000x, and macro operation. The stackable 3 D architecture integrating multiple layers of AFE V-FTJs with contact optimization further increases memory density. Robust endurance > 10⁹ cycles at |4V| and stable nonvolatile data retention > 10⁴ sec with extrapolation to 10 years are achieved. The proposed cell contact V-FTJ by AFE is a promising pathway toward BEOL NVMs by a NAND/NOR-based framework.