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QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering | IEEE Conference Publication | IEEE Xplore
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QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering

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Sunghyun Yoon; Sung-In Hong; Daehyun Kim; Garam Choi; Young Mo Kim; Kyunghoon Min
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Abstract:

3D ferroelectric NAND (Fe-NAND) Quad-level cell (QLC) operation has been demonstrated for the first time to our knowledge, using the 3D CTN NAND test vehicle for mass pro...Show More

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Abstract:

3D ferroelectric NAND (Fe-NAND) Quad-level cell (QLC) operation has been demonstrated for the first time to our knowledge, using the 3D CTN NAND test vehicle for mass production. The 3D Fe-NAND is optimized by engineering the cell stack layers, enlarging a program/erase (PE) window up to 10.5 V. QLC operation is successfully verified with the minimum gap margin of 0.24 V. Endurance and data retention characteristics are also reported.
Published in: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Date of Conference: 11-16 June 2023
Date Added to IEEE Xplore: 24 July 2023
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ISSN Information:

DOI: 10.23919/VLSITechnologyandCir57934.2023.10185294
Conference Location: Kyoto, Japan
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