We demonstrate a 1. 2x reduction in write voltage, 20x improvement in write speed and unlimited cycling endurance on a BEOL compatible Ferroelectric FET (FeFET) at 77K (Cold FeFET), justifying the potential of Cold-FEFET as a candidate for last-level cache memory in cryogenic high-performance computing (HPC) applications. Highly stable and tight threshold voltage distribution characteristics for both programmed and erased states in Cold-FeFET (pre and post cycling) is leveraged to reduce the read-current window specs and lower the write voltage amplitude and pulse compared to room temperature operation. In conjunction with logic CMOS operating at 77K, monolithic 3D integrated Cold-FeFET with unlimited write endurance provides an effective solution for future cryogenic HPC applications.