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In this study, the impact of ferroelectric layer thickness (Tfe) on negative capacitance metal-oxide-semiconductor-field-effect-transistor (NCFET) is investigated by the analytical model. Base on the analytical model, the performance parameters of NCFET are compared with those of baseline MOSFET. It is observed that the device characteristics of NCFET are significantly via the internal amplification. Meanwhile, they are also influenced by the Tfe induced by the NC effect. In addition, for avoiding the hysteresis phenomenon in the integrated devices and circuits, reducing Tfe is required. Under the condition of Tfe < 30 nm, NCFEF shows the superior device performance compared with the baseline MOSFET.
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