Abstract
Today’s System on Chip (SoC) technology can achieve unprecedented computing speed that is shifting the IC design bottleneck from computation capacity to communication bandwidth and flexibility. This chapter presents an innovative methodology for automatically generating the energy models of a versatile and parametric on-chip communication IP (STBus). Eventually, those models are linked to a standard SystemC simulator, running at BCA and TLM abstraction level. To make the system power simulation fast and effective, we enhanced the STBus class library with a new set of power profiling features (“Power API”), allowing performing power analysis either statically (i.e.: total avg. power) or at simulation runtime (i.e.: dynamic profiling). In addition to random patterns, our methodology has been extensively benchmarked with the high-level SystemC simulation of a real world multi-processor platform (MPARM). It consists of four ARM7TDMI processors accessing a number of peripheral targets (including several banks of SRAMs, Interrupt’s slaves and ROMs) through the STBus communication infrastructure. The power analysis of the benchmark platform proves to be effective and highly correlated, with an average error of 2% and a RMS of 0.015 mW vs. the reference (i.e. gate level) power figures. The chapter ends presenting a new and effective methodology to minimize the Design of Experiments (DoE) needed to characterize the above power models. The experimental figures show that our DoE optimization techniques are able to trade off power modeling approximation with characterization cost, leading to a 60% average reduction of the sampling space, with 20% of maximum error.
STMicroelectronics
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Bona, A., Zaccaria, V., Zafalon, R. (2004). System Level Power Modeling and Simulation of High-End Industrial Network-On-Chip. In: Macii, E. (eds) Ultra Low-Power Electronics and Design. Springer, Boston, MA. https://doi.org/10.1007/1-4020-8076-X_13
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DOI: https://doi.org/10.1007/1-4020-8076-X_13
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4020-8075-3
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