Abstract
A Monte Carlo method for calculation of the small signal response of charge carriers in semiconductors is presented. The transient Boltzmann equation is linearized with respect to the electric field and an impulse-like perturbation in the field is assumed. The presented formalism allows the impulse response to be explained as a relaxation process, where two carrier ensembles evolve from different inditial distributions to one and the same steady state. Using different methods to generate the initial distributions gives rise to a variety of Monte Carlo algorithms. Both existing and new algorithms for direct simulation of the impulse response are obtained in a unified way. Additionally, the special case of vanishing electric field is considered. Applications to technologically significant semiconductors are shown. For Gallium Arsenide a resonance effect occurring at low temperatures is discussed.
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References
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Kosina, H., Nedjalkov, M., Selberherr, S. (2001). Monte Carlo Analysis of the Small-Signal Response of Charge Carriers. In: Margenov, S., Waśniewski, J., Yalamov, P. (eds) Large-Scale Scientific Computing. LSSC 2001. Lecture Notes in Computer Science, vol 2179. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45346-6_17
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DOI: https://doi.org/10.1007/3-540-45346-6_17
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