Skip to main content

Multi-physics and Multi-scale Modelling of Materials Processing

  • Conference paper
  • First Online:
Applied Parallel Computing (PARA 2002)

Part of the book series: Lecture Notes in Computer Science ((LNCS,volume 2367))

Included in the following conference series:

  • 480 Accesses

Abstract

This talk discusses recent developments in the quest to model complex physical phenomena where multiple length and time scales need to be treated. In particular, materials modelling from the atomic-scale interactions to macroscopic continua is highlighted from the point of view of computational science. As a specific example, the case of three-dimensional etching of silicon-based microelectromechanical (MEM) components is presented. Moreover, the parallelisation of real-space-based methods for modelling nanostructures is discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Nieminen R.M.: Recent developments in density-functional theory. Curr. Opin. in Solid State Mater. Sci. 4 (1999) 493–515

    Article  Google Scholar 

  2. Frenkel D. and Smit B. Understanding molecular simulation (London: Academic Press, 1996).

    MATH  Google Scholar 

  3. Dhatt G. and Touzot G.: The finite element method displayed (New York: Wiley, 1984).

    Google Scholar 

  4. Broughton J.Q., Abraham F.F., Bernstein N. and Kaxiras E.: Concurrent coupling of length scales: methodology and application. Phys.Rev. B 60 (1999) 2391–2403.

    Article  Google Scholar 

  5. Ogata S., Lidorikis E., Shijomo F., Nakano A., Vashishta P. and Kalia R.K.: Hybrid finite-element/molecular dynamics/electron-density-functional approach to materials simulations on parallel computers. Comput.Phys.Commun. 138 (2001) 143–154.

    Article  MATH  Google Scholar 

  6. Weinan E. and Zhongyi Huang: Matching conditions in atomistic-continuum modeling of materials. Phys. Rev. Lett. 87 (2001) 135501-1–135501-4.

    Google Scholar 

  7. Chopard B. and Droz M.: Cellular automata modeling of physical systems (Cambridge: Cambridge University Press, 1998).

    Book  MATH  Google Scholar 

  8. Succi S.: The lattice Boltzmann equation for fluid dynamics and beyond (Oxford: Clarendon Press, 2001).

    MATH  Google Scholar 

  9. Succi S., Filippova O., Smith G. and Kaxiras E.: Applying the lattice Boltzmann equation to multiscale fluid problems. Comput. in Sci. and Eng. 3 (2001) 26–37.

    Article  Google Scholar 

  10. Allongue P.: Molecular imaging and local density of states characterisation at the Si(111)/NaOH interface. Phys.Rev. Lett. 77 (1996) 1986–1989.

    Article  Google Scholar 

  11. Gosalvez M.A., Foster A.S. and Nieminen R.M: Multiscale modelling of wet chemical etching of crystalline silicon. Phys.Rev.Lett. (submitted for publication).

    Google Scholar 

  12. Heiskanen M., Torsti T., Puska M.J. and Nieminen R.M.: A novel multigrid method for electronic structure calculations. Phys.Rev. B 63 (2001) 245106-1–245106-8 (2001).

    Article  Google Scholar 

  13. Gosalvez M., Nieminen R.M., Kilpinen P., Haimi E. and Lindroos V.K.: Anisotropic wet chemical etching of crystalline silicon: atomistic Monte Carlo simulations and experiments. Appl. Surf. Sci.178 (2001) 7–26.

    Article  Google Scholar 

  14. Gosalvez M.A., Foster A.S. and Nieminen R.M.: Atomistic simulations of surface coverage effects on anisotropic wet chemical etching of crystalline silicon. Appl. Surf. Sci. (submitted for publication).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2002 Springer-Verlag Berlin Heidelberg

About this paper

Cite this paper

Nieminen, R.M. (2002). Multi-physics and Multi-scale Modelling of Materials Processing. In: Fagerholm, J., Haataja, J., Järvinen, J., Lyly, M., Råback, P., Savolainen, V. (eds) Applied Parallel Computing. PARA 2002. Lecture Notes in Computer Science, vol 2367. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-48051-X_6

Download citation

  • DOI: https://doi.org/10.1007/3-540-48051-X_6

  • Published:

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-43786-4

  • Online ISBN: 978-3-540-48051-8

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics