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Quantum Dot Spin Transistors, Self-consistent Simulation of

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Encyclopedia of Complexity and Systems Science

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The electronic and transport properties of quantum dot spintransistors are presented with emphasis on single-electrontunneling and shell structure. A comprehensive modeling approachbased on two methods is developed: (1) quantum dot electronicstructure and confinement potential are determined from theself-consistent solution of the Poisson and Schrödinger equationswithin the spin-density-functional theory in magnetic fieldsand (2) a quantum transport model based on numerically exactdiagonalization of the many-body Schrödinger equation is used todescribe transport properties of quantum dots. In the linear transportregime characterized by a small applied source-drain voltage,single-electron tunneling through the quantum dot reveals theexistence of a shell structure in the ground state electronaddition spectra which magnetic field dependence is determined bycompetition among the many-body interaction effects, confinementpotential strength and magnetic field...

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Abbreviations

Quantum dot (QD) :

A man-made nanostructure, generally made with semiconductor materials, in which the motion of particles (such as conduction band electrons) is bound in all three spatial directions. As a result of this 3D spatial confinement, quantum dots exhibit a discreet energy spectrum with particle wave functions localized within the quantum dot.

Coulomb blockade :

The increased resistance experienced at small bias voltages by an electronic device comprising of at least two tunnel junctions (terminals), which is manifested in the electrostatic blockade of the current by the charge accumulation on a small conducting island between the terminals.

Single electron transistor :

An electronic device characterized by two tunnel junctions (“source” and “drain”) between which a conducting “island” (QD) is located. The electrostatic potential of the QD island is controlled by a third electrode (the “base”). By changing the controlling voltage on the base electrode, transport channels for electron current through the QD can be opened or closed. When the channel is open, an electron can tunnel into the island on an available energy level from the source contact and then subsequently tunnels out to the drain electrode (single-electron transport).

Spin blockade :

The suppression (partial or total) of the current through a QD device populated by electrons and caused by the Pauli exclusion principle.

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Acknowledgments

We are grateful to R. M. Martin and D. G. Austing forhelpful discussions. This work was supported by DARPA-QuIST program, MCCthrough the NSF, and NCSA.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering & Beckman Institute for Advanced Science and Technology, University of Illinois, Urbana, USA

    Dmitriy V. Melnikov & Jean-Pierre Leburton

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  1. Dmitriy V. Melnikov
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Editors and Affiliations

  1. RAMTECH LIMITED, 122 Escalle Lane, Larkspur, CA, 94939, USA

    Robert A. Meyers Ph. D. (Editor-in-Chief) (Editor-in-Chief)

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Melnikov, D.V., Leburton, JP. (2009). Quantum Dot Spin Transistors, Self-consistent Simulation of. In: Meyers, R. (eds) Encyclopedia of Complexity and Systems Science. Springer, New York, NY. https://doi.org/10.1007/978-0-387-30440-3_434

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