Skip to main content

Neuro-inspired System with Crossbar Array of Amorphous Metal-Oxide-Semiconductor Thin-Film Devices as Self-plastic Synapse Units

Letter Recognition of Five Alphabets

  • Conference paper
  • First Online:
Neural Information Processing (ICONIP 2019)

Part of the book series: Lecture Notes in Computer Science ((LNTCS,volume 11954))

Included in the following conference series:

  • 1748 Accesses

Abstract

Artificial intelligences are essential concept and indispensable in future smart societies, while neural networks are typical representative schemes that imitate human brains and mimic biological functions. However, the conventional neural networks are composed of lengthy software that is executed by high-spec computing hardware, the computer size is enormous, and power dissipation is huge. On the other hand, neuro-inspired systems are practical solutions consisting only of customized hardware, and the hardware size and power dissipation can be saved. Therefore, we have been studying neuro-inspired systems with amorphous metal-oxide-semiconductor (AOS) thin-film devices as synapse units and suggesting revised Hebbian learning that is automatically and locally conducted without additional control circuits. Here, the conductance degradation can be employed as self-plastic weight of synapse units. As a result, it is promising that the neuro-inspired systems become three-dimensional integrated systems, the hardware size can be very compact, the power dissipation can be very low, and all functions of biological brains are obtained. In this study, we have been developing neuro-inspired systems with crossbar array of AOS thin-film devices as self-plastic synapse units. First, the crossbar array is produced, and it is discovered that the electric current continuously decreases along the application time. Next, the neuro-inspired system is really constructed by a field-programmable-gate-array LSI and crossbar array, and it is validated that a function of letter recognition is acquired after learning operation. In particular, we succeed in the letter recognition of five alphabets in this paper, whereas we succeeded in that of three alphabets in the previous paper, which is theoretically discussed, namely, the theoretical maximum performance seems to be achieved. Once the fundamental operations are validated, further progressed functions will be achieved by greatening the device and circuit scales.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. McCarthy, J., Minsky, M.L., Rochester, N., Shannon, C.E.: A proposal for the dartmouth summer research project on artificial intelligence. In: Dartmouth Conference (1956)

    Google Scholar 

  2. Russell, S., Norvig, P.: Artificial Intelligence: A Modern Approach. Pearson Education, Prentice Hall (2009)

    MATH  Google Scholar 

  3. McCulloch, W.S., Pitts, W.: A logical calculus of the ideas immanent in nervous activity. Bull. Math. Biophys. 5, 115–133 (1943)

    Article  MathSciNet  Google Scholar 

  4. Wasserman, P.D.: Neural Computing: Theory and Practice. Coriolis Group, Scottsdale (1989)

    Google Scholar 

  5. Ferrucci, D., et al.: Building Watson: an overview of the DeepQA project. AI Mag. 31, 59–79 (2010)

    Article  Google Scholar 

  6. Lande, T.S.: Neuromorphic Systems Engineering, Neural Networks in Silicon. Springer, Boston (2013)

    Google Scholar 

  7. Suri, M.: Advances in Neuromorphic Hardware Exploiting Emerging Nanoscale Devices. Springer, New Delhi (2017). https://doi.org/10.1007/978-81-322-3703-7

    Book  Google Scholar 

  8. Merolla, P.A., et al.: A million spiking-neuron integrated circuit with a scalable communication network and interface. Science 345, 668–673 (2014)

    Article  Google Scholar 

  9. Neckar, A., et al.: Braindrop: a mixed-signal neuromorphic architecture with a dynamical systems-based programming model. Proc. IEEE 107, 144–164 (2019)

    Article  Google Scholar 

  10. Kimura, M., Koga, Y., Nakanishi, H., Matsuda, T., Kameda, T., Nakashima, Y.: In-Ga-Zn-O thin-film devices as synapse elements in a neural network. IEEE J. Electron Devices Soc. 6, 100–105 (2017)

    Article  Google Scholar 

  11. Kameda, T., Kimura, M., Nakashima, Y.: Neuromorphic hardware using simplified elements and thin-film semiconductor devices as synapse elements - simulation of hopfield and cellular neural network. In: Liu, D., Xie, S., Li, Y., Zhao, D., El-Alfy, E.S. (eds.) ICONIP 2017. LNCS, vol. 10639, pp. 769–776. Springer, Heidelberg (2017). https://doi.org/10.1007/978-3-319-70136-3_81

    Chapter  Google Scholar 

  12. Prezioso, M., Merrikh-Bayat, F., Hoskins, B.D., Adam, G.C., Likharev, K.K., Strukov, D.B.: Training and operation of an integrated neuromorphic network based on metal-oxide memristors. Nature 521, 61–64 (2015)

    Article  Google Scholar 

  13. Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., Hosono, H.: Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488–492 (2004)

    Article  Google Scholar 

  14. Kim, S.J., Yoon, S., Kim, H.J.: Review of solution-processed oxide thin-film transistors. Jpn. J. Appl. Phys. 53, 02BA02 (2014)

    Article  Google Scholar 

  15. Kimura, M., Morita, R., Sugisaki, S., Matsuda, T., Kameda, T., Nakashima, Y.: Cellular neural network formed by simplified processing elements composed of thin-film transistors. Neurocomputing 248, 112–119 (2017)

    Article  Google Scholar 

  16. Kimura, M., Nakamura, N., Yokoyama, T., Matsuda, T., Kameda, T., Nakashima, Y.: Simplification of processing elements in cellular neural networks. In: Hirose, A., Ozawa, S., Doya, K., Ikeda, K., Lee, M., Liu, D. (eds.) ICONIP 2016. LNCS, vol. 9948, pp. 309–317. Springer, Cham (2016). https://doi.org/10.1007/978-3-319-46672-9_35

    Chapter  Google Scholar 

  17. Nomura, K., et al.: Three-dimensionally stacked flexible integrated circuit: amorphous oxide/polymer hybrid complementary inverter using n-type a-In-Ga-Zn-O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors. Appl. Phys. Lett. 96, 263509 (2010)

    Article  Google Scholar 

  18. Chen, Y., et al.: Nanoscale molecular-switch crossbar circuits. Nanotechnology 14, 462–468 (2003)

    Article  Google Scholar 

  19. Jo, S.H., Chang, T., Ebong, I., Bhadviya, B.B., Mazumder, P., Lu, W.: Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett. 10, 1297–1301 (2010)

    Article  Google Scholar 

  20. Alibart, F., Zamanidoost, E., Strukov, D.B.: Pattern classification by memristive crossbar circuits using ex situ and in situ training. Nat. Commun. 4, 2072 (2013)

    Article  Google Scholar 

  21. Hu, M., et al.: Dot-product engine for neuromorphic computing: programming 1T1M crossbar to accelerate matrix-vector multiplication. In: The 53rd Annual Design Automation Conference (DAC 2016) (2016)

    Google Scholar 

  22. Serrano-Gotarredona, T.,. Masquelier, T, Prodromakis, T., Indiveri, G., Linares-Barranco, B.: STDP and STDP variations with memristors for spiking neuromorphic learning systems. Front. Neurosci. 7, Article 2 (2013)

    Google Scholar 

  23. Matsuda, T., Umeda, K., Kato, Y., Nishimoto, D., Furuta, M., Kimura, M.: Rare-metal-free high-performance Ga-Sn-O thin film transistor. Sci. Rep. 7, 44326 (2017)

    Article  Google Scholar 

  24. Matsuda, T., Uenuma, M., Kimura, M.: Thermoelectric effects of amorphous Ga–Sn–O thin film. Jpn. J. Appl. Phys. 56, 070309 (2017)

    Article  Google Scholar 

  25. Okamoto, R., Fukushima, H., Kimura, M., Matsuda, T.: Characteristic evaluation of Ga-Sn-O films deposited using mist chemical vapor deposition. In: The 2017 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2017), pp. 74–75 (2017)

    Google Scholar 

  26. Sugisaki, S., et al.: Memristive characteristic of an amorphous Ga-Sn-O thin-film device. Sci. Rep. 9, 2757 (2019)

    Article  Google Scholar 

  27. Kimura, M., et al.: Neuromorphic system with crosspoint-type amorphous Ga-Sn-O thin-film devices as self-plastic synapse elements. ECS Trans. 90, 157–166 (2019)

    Article  Google Scholar 

  28. Dayhoff, J.E.: Neural Network Architectures: An Introduction. Van Nostrand Reinhold, New York (1989)

    Google Scholar 

  29. Kimura, M., et al.: Hopfield neural network with double-layer amorphous metal-oxide semiconductor thin-film devices as crosspoint-type synapse elements and working confirmation of letter recognition. In: Cheng, L., Leung, A.C.S., Ozawa, S. (eds.) ICONIP 2018. LNCS, vol. 11307, pp. 637–646. Springer, Cham (2018). https://doi.org/10.1007/978-3-030-04239-4_57

    Chapter  Google Scholar 

  30. Kimura, M., Imai, S.: Degradation evaluation of α-IGZO TFTs for application to AM-OLEDs. IEEE Electron Device Lett. 31, 963–965 (2010)

    Article  Google Scholar 

  31. Vision Society of Japan: Visual Information Processing Handbook. Asakura Publishing, Tokyo (2017)

    Google Scholar 

  32. McEliece, R., Posner, E., Rodemich, E., Venkatesh, S.: The capacity of the hopfield associative memory. IEEE Trans. Inform. Theory 33, 461–482 (1987)

    Article  MathSciNet  Google Scholar 

Download references

Acknowledgments

This work is partially supported by KAKENHI (C) 16K06733, KAKENHI (C) 19K11876, Yazaki Memorial Foundation for Science and Technology, Support Center for Advanced Telecommunications Technology Research, Research Grants in the Natural Sciences from the Mitsubishi Foundation, Telecommunications Advancement Foundation, collaborative research with ROHM Semiconductor, collaborative research with KOA Corporation, Laboratory for Materials and Structures in Tokyo Institute of Technology, and Research Institute of Electrical Communication in Tohoku University.

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Mutsumi Kimura .

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2019 Springer Nature Switzerland AG

About this paper

Check for updates. Verify currency and authenticity via CrossMark

Cite this paper

Kimura, M. et al. (2019). Neuro-inspired System with Crossbar Array of Amorphous Metal-Oxide-Semiconductor Thin-Film Devices as Self-plastic Synapse Units. In: Gedeon, T., Wong, K., Lee, M. (eds) Neural Information Processing. ICONIP 2019. Lecture Notes in Computer Science(), vol 11954. Springer, Cham. https://doi.org/10.1007/978-3-030-36711-4_40

Download citation

  • DOI: https://doi.org/10.1007/978-3-030-36711-4_40

  • Published:

  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-030-36710-7

  • Online ISBN: 978-3-030-36711-4

  • eBook Packages: Computer ScienceComputer Science (R0)

Publish with us

Policies and ethics