Abstract
This work is concerned with the characterization of a bandgap reference circuit, fabricated in a commercial 65 nm CMOS technology, designed for applications to HL-LHC experiments. Measurement results show a temperature coefficient of about 16 ppm/\(^\circ \)C over a temperature range of 140 \(^\circ \)C (from \(-40\) to 100 \(^\circ \)C) and a variation of 1.6% for V\(_{DD}\) from 1.08 to 1.32 V. The mean value of the bandgap output is about 400 mV, with a 5% maximum shift when exposed to a Total Ionizing Dose (TID) around 1 Grad (SiO\(_2\)). The power consumption is 165 \(\upmu \)W at room temperature, with a core area of 0.02835 mm\(^2\).
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Acknowledgements
The authors wish to thank Serena Mattiazzo and Devis Pantano (University of Padova) for providing the source for X-ray irradiation and for their constant support during the irradiation campaign, and Dr. Francesco De Canio for his contribution to the design and characterization activity. The authors are also in debt with Massimo Rossella (INFN Pavia) who have kindly made the climatic chamber available for the bandgap characterization.
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Traversi, G. et al. (2020). A Rad-Hard Bandgap Voltage Reference for High Energy Physics Experiments. In: Saponara, S., De Gloria, A. (eds) Applications in Electronics Pervading Industry, Environment and Society. ApplePies 2019. Lecture Notes in Electrical Engineering, vol 627. Springer, Cham. https://doi.org/10.1007/978-3-030-37277-4_3
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DOI: https://doi.org/10.1007/978-3-030-37277-4_3
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