Abstract
The superior electrical and thermal properties of silicon carbide (SiC) power electronic devices, compared with silicon (Si) devices, lead to high efficiency and low volume in power converter designs. In this paper, the simulation model of the SiC MOSFETs is built, and the dynamic and static performance is obtained. The switching loss of SiC devices for AC motor control with pulse width modulation is calculated and analyzed.
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Acknowledgements
The authors acknowledge the Jiangsu University Natural Science Research Project (18KJB470024) and Provincial Construction System Science and Technology Project of Jiangsu Provincial Housing and Urban-Rural Construction Department (2018ZD088). This work is partly supported by the Natural Science Foundation of Jiangsu Province of China (No. BK20161165), the applied fundamental research Foundation of Xuzhou of China (No. KC17072). The authorized patents for invention are also the research and development of Jiangsu Province Industry-University-Research Cooperation Project (BY2019056).
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Qiu, Y., Fang, E., Li, D. (2022). Dynamic and Static Performance Analysis of SiC MOSFET with PWM Control. In: Jiang, D., Song, H. (eds) Simulation Tools and Techniques. SIMUtools 2021. Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, vol 424. Springer, Cham. https://doi.org/10.1007/978-3-030-97124-3_25
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DOI: https://doi.org/10.1007/978-3-030-97124-3_25
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