Abstract
The novelty of the article is to bring the concept of thermionic emission and inter-band tunnelling together in the charge plasma tunnel FET (CP-TFET). The use of a thin n+ the doped layer which is placed under the channel in a dielectric box (SiO2) injects extra electrons into the channel through the vertical thermionic emission process. The vertical thermionic emission causes a surplus to the electrons that are coming from horizontal tunnelling and that leads to six decades of furtherance in the drain current and ten decades of increment in the leakage current in the conventional CP-TFET structure. In addition, deposition of two metals of different work-function over the drain region is used for resolving the issues of higher leakage and ambipolar behavior of conventional TFET in the final state of art. The dual metal drain improves the reliability concern of CP-TFET at circuit level implementation and AS provides a good current driving ability.
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References
Koswatta, S.O., Lundstrom, M.S., Nikonov, D.E.: Performance comparison between pin tunneling transistors and conventional MOSFETs. IEEE Trans. Electron Devices 56(3), 456–465 (2009)
Damrongplasit, N., Kim, S.H., Liu, T.J.K.: Study of random dopant fluctuation induced variability in the raised-Ge-source TFET. IEEE Electron Device Lett. 34(2), 184–186 (2013)
Duvvury, C.: A guide to short-channel effects in MOSFETs. IEEE Circuits Devices Mag. 2(6), 6–10 (1986)
Damrongplasit, N., Shin, C., Kim, S.H., Vega, R.A., Liu, T.J.K.: Study of random dopant fluctuation effects in germanium-source tunnel FETs. IEEE Trans. Electron Devices 58(10), 3541–3548 (2011)
Shin, C., Sun, X., Liu, T.J.K.: Study of random-dopant-fluctuation (RDF) effects for the trigate bulk MOSFET. IEEE Trans. Electron Devices 56(7), 1538–1542 (2009)
Hajare, R., Lakshminarayana, C., Raghunandan, G.H., raj, C.P.: Performance enhancement of FINFET and CNTFET at different node technologies. Microsyst. Technol. 22(5), 1121–1126 (2015). https://doi.org/10.1007/s00542-015-2468-9
ATLAS Device Simulation Software, Silvaco Int., Santa Clara (2014)
Royer, C.L., Mayer, F.: Exhaustive experimental study of tunnel field effect transistors (TFETs): from materials to architecture. In: Proceedings of the 10th International Conference Ultimate Integration of Silicon, pp. 53–56 (May 2009)
Choi, W.Y., Park, B.G., Lee, J.D., Liu, T.J.K.: Tunneling field effect transistor (TFETs) with subthreshold swing (SS) less than 60 mV/Dec. IEEE Electron Device Lett. 28(8), 743–745 (2007)
Yadav, S.K., Sharma, D., Soni, D., Aslam, M.: Controlling ambipolarity with improved RF performance by drain/gate work function engineering and using high K dielectric material in electrically doped TFET: proposal and optimization. J. Comput. Electron. 16(3), 721–731 (2017)
Kumar, M.J., Janardhanan, S.: Doping-less tunnel field effect transistor: design and investigation. IEEE Trans. Electron Devices 60(10), 3285–3290 (2013)
Lahgere, A., Sahu, C., Singh, J.: PVT-aware design of dopingless dynamically congurable tunnel FET. IEEE Trans. Electron Devices 62(8), 2404–2409 (2015)
Kumar, M.J., Nadda, K.: Bipolar charge-plasma transistor: a novel three terminal device. IEEE Trans. Electron Devices 59(4), 962–967 (2012)
Zhang, Q., Zhao, W., Seabaugh, A.: Low-subthreshold-swing tunnel transistors. IEEE Electron Device Lett. 27(4), 297–300 (2006)
Polishchuk, I., Ranade, P., King, T.J., Hu, C.: Dual work function metal gate CMOS technology using metal interdiffusion. IEEE Electron Device Lett. 22(9), 444–446 (September 2001)
Mohankumar, N., Syamal, B., Sarkar, C.K.: Influence of channel and gate engineering on the analog and RF performance of DG MOSFETs. IEEE Trans. Electron Devices 57(4), 820–826 (2010)
Nigam, K., Kondekar, P., Sharma, D.: DC characteristics and analog/RF performance of novel polarity control GaAs-Ge based tunnel field effect transistor. Superlattices Microstruct. 92(C), 224–231 (April 2016)
Haug, A.: Auger recombination in direct-gap semiconductors: bandstructure effects. J. Phys. C: Solid State Phys. 16(21), 4159–4172 (1983)
Schenk, A.: A model for the field and temperature dependence of Shockley-read-hall lifetimes in silicon. Solid State Electron 35(11), 1585–1596 (1992)
Boucart, K., Ionescu, A.M.: Double-gate TFET with high-k gate dielectric. IEEE Trans. Electron Devices 54(7), 1725–1733 (2007)
Wang, P.F., et al.: Complementary tunneling transistor for low power application. Solid State Electron. 48(12), 2281–2286 (2004)
Raad, B.R., Tirkey, S., Sharma, D., Kondekar, P.: A new design approachof dopingless TFET for enhancement of device characteristics. IEEE Trans. Electron Devices 64(4), 1830–1836 (2017)
Pahwa, G., et al.: Analysis and compact modeling of negative capacitance transistor with high on-current and negative output differential resistance part II: model validation. IEEE Trans. Electron Devices 63(12), 4986–4992 (2016)
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Yadav, S., Joshi, D., Kalita, S., Singh, T. (2022). Quantum Tunnelling and Themonic Emission, Transistor Simulation. In: Shah, A.P., Dasgupta, S., Darji, A., Tudu, J. (eds) VLSI Design and Test. VDAT 2022. Communications in Computer and Information Science, vol 1687. Springer, Cham. https://doi.org/10.1007/978-3-031-21514-8_11
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