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Resistive Switching Behavior of TiO2/(PVP:MoS2) Nanocomposite Bilayer Hybrid RRAM

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VLSI Design and Test (VDAT 2022)

Part of the book series: Communications in Computer and Information Science ((CCIS,volume 1687))

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Abstract

Resistive switching behavior of TiO2 and (PVP:MoS2) nanocomposite (NC) bilayer in resistive random-access memory (RRAM) devices fabricated on indium tin oxide (ITO) coated glass with ITO acting as bottom electrode and Ag as top electrode was explored. These RRAM devices exhibited excellent resistive switching with very low SET and RESET voltages of 1.04 V and − 1.18 V respectively. A good repeatability up to 100 cycles was demonstrated with high on/off current ratios of more than 103 at read voltage of 0.2 V. These results indicate that NC bilayer of PVP and MoS2 can be a promising candidate for exploration of high performance RRAM devices.

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Acknowledgment

Support from the Sir Visvesvaraya Young Faculty Research Fellowship (YFRF), Ministry of Electronics and Information Technology (MeitY), Govt. of India is gratefully acknowledged.

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Authors and Affiliations

  1. Flexible Large Area Microelectronics (FLAME) Research Group, Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur, India

    Shalu Saini, Anil Lodhi, Anurag Dwivedi, Arpit Khandelwal & Shree Prakash Tiwari

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  1. Shalu Saini
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  2. Anil Lodhi
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  3. Anurag Dwivedi
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  4. Arpit Khandelwal
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  5. Shree Prakash Tiwari
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Corresponding author

Correspondence to Shree Prakash Tiwari .

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Editors and Affiliations

  1. Department of Electrical Engineering, Indian Institute of Technology Jammu, Jammu, India

    Ambika Prasad Shah

  2. Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India

    Sudeb Dasgupta

  3. Department of Electronics Engineering, Sardar Vallabhbhai National Institute of Technology Surat, Surat, India

    Anand Darji

  4. Department of Computer Science and Engineering, Indian Institute of Technology Tirupati, Tirupati, India

    Jaynarayan Tudu

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Saini, S., Lodhi, A., Dwivedi, A., Khandelwal, A., Tiwari, S.P. (2022). Resistive Switching Behavior of TiO2/(PVP:MoS2) Nanocomposite Bilayer Hybrid RRAM. In: Shah, A.P., Dasgupta, S., Darji, A., Tudu, J. (eds) VLSI Design and Test. VDAT 2022. Communications in Computer and Information Science, vol 1687. Springer, Cham. https://doi.org/10.1007/978-3-031-21514-8_39

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  • DOI: https://doi.org/10.1007/978-3-031-21514-8_39

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-031-21513-1

  • Online ISBN: 978-3-031-21514-8

  • eBook Packages: Computer ScienceComputer Science (R0)

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