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Investigation of Traps in AlGaN/GaN HEMT Epitaxial Structure Using Conductance Method

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VLSI Design and Test (VDAT 2022)

Part of the book series: Communications in Computer and Information Science ((CCIS,volume 1687))

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Abstract

In this article, an investigation has been carried out to determine the trap density and trap energy level using parallel conductance method for AlGaN/GaN HEMT epitaxial structure. Capacitance-Voltage (C–V) and Conductance-Voltage (G–V) measurements with frequency (1 kHz – 10 MHz) and temperature (25 and 250 °C) variations have been performed on large area Schottky pad having area 150 µm2 × 150 µm2. Two different types of traps have been observed with different time constants and densities. In the low frequency range between 1 and 10 kHz slow traps with density (2.79 × 1012–1.79 × 1013 cm−2) and time constant (~0.159 ms) at an energy level of 0.39 eV from EC have been observed whereas in the high frequency range greater than 1 MHz a continuum of ultra-fast traps has been observed with density between 1.94 × 1012 and 6.25 × 1012 cm−2 with time constant of 19.9 ns at 0.18 eV from EC is observed. It is also identified that at high temperature the time constant and trap density for ultra-fast traps has reduced whereas the density of slow traps has a significant increment with similar time constant.

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Acknowledgment

Authors are thankful to the GaN MMIC team, Solid State Physics Laboratory, DRDO, New Delhi, India for providing the opportunity to carry out this work, and the Indian Institute of Technology, New Delhi, India for their experimental support.

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Authors and Affiliations

  1. Department of Electronic Science, University of Delhi, New Delhi, 110021, India

    Chanchal & Ajay Kumar Visvkarma

  2. Solid State Physics Laboratory, New Delhi, 110054, India

    Chanchal, Ajay Kumar Visvkarma, Amit Malik, Robert Laishram & Dipendra Singh Rawal

  3. Department of Physics, Indian Institute of Technology, New Delhi, 110016, India

    Hardhyan Sheoran

  4. Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, 110078, India

    Manoj Saxena

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  1. Chanchal
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  2. Ajay Kumar Visvkarma
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  3. Hardhyan Sheoran
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  4. Amit Malik
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  5. Robert Laishram
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  6. Dipendra Singh Rawal
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  7. Manoj Saxena
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Correspondence to Chanchal .

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Editors and Affiliations

  1. Department of Electrical Engineering, Indian Institute of Technology Jammu, Jammu, India

    Ambika Prasad Shah

  2. Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India

    Sudeb Dasgupta

  3. Department of Electronics Engineering, Sardar Vallabhbhai National Institute of Technology Surat, Surat, India

    Anand Darji

  4. Department of Computer Science and Engineering, Indian Institute of Technology Tirupati, Tirupati, India

    Jaynarayan Tudu

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Chanchal et al. (2022). Investigation of Traps in AlGaN/GaN HEMT Epitaxial Structure Using Conductance Method. In: Shah, A.P., Dasgupta, S., Darji, A., Tudu, J. (eds) VLSI Design and Test. VDAT 2022. Communications in Computer and Information Science, vol 1687. Springer, Cham. https://doi.org/10.1007/978-3-031-21514-8_7

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  • DOI: https://doi.org/10.1007/978-3-031-21514-8_7

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-031-21513-1

  • Online ISBN: 978-3-031-21514-8

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