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Memory Effects in Multi-terminal Solid State Devices and Their Applications

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Handbook of Memristor Networks

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Abstract

We give a general overview on Silicon nanowire-based multi-terminal memristive devices. The functionality of the devices can be used for logic, memory and sensing applications. It is shown that three- and four- terminal memristive devices can be used for both logic and memory applications. In particular, Schottky-barrier silicon nanowire FETs are very interesting devices due to their CMOS-compatibility and ease of fabrication.

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Acknowledgements

The authors would like to thank Dr. Michael Zervas as well as Dr. Sandro Carrara for useful discussions. Moreover, the authors thank the CMI staff of EPFL for help with the fabrication. This work has been partially supported by the Swiss NSF Grant No 200021-122168, Swiss NSF Grant No 200021-132539, Nano-Tera Grant No 20NA21-128841, Nano-Tera Grant No 20NA21-128840 and grant ERC-2009-AdG-246810.

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Authors and Affiliations

  1. Lingentec SA, Lausanne, Switzerland

    Davide Sacchetto

  2. The University of Utah, Salt Lake City, UT, USA

    Pierre-Emmanuel Gaillardon

  3. LSM, EPFL, Lausanne, Switzerland

    Yusuf Leblebici & Giovanni De Micheli

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  1. Davide Sacchetto
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  2. Pierre-Emmanuel Gaillardon
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  3. Yusuf Leblebici
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  4. Giovanni De Micheli
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Correspondence to Pierre-Emmanuel Gaillardon .

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Editors and Affiliations

  1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA

    Leon Chua

  2. Democritus University of Thrace, Xanthi, Greece

    Georgios Ch. Sirakoulis

  3. Department of Computer Science and Creative Technologies, University of the West of England, Bristol, UK

    Andrew Adamatzky

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Sacchetto, D., Gaillardon, PE., Leblebici, Y., De Micheli, G. (2019). Memory Effects in Multi-terminal Solid State Devices and Their Applications. In: Chua, L., Sirakoulis, G., Adamatzky, A. (eds) Handbook of Memristor Networks. Springer, Cham. https://doi.org/10.1007/978-3-319-76375-0_36

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