Abstract
We present numerical results for GaAs/AlGaAs double-barrier resonant tunneling heterostructure devices. A particular emphasis is given to the influence of quantum well thickness and number of quantum well layers on current-voltage characteristic and carrier density profile. In the paper, we discuss results obtained for spatial dependencies of carrier densities, the peak and the valley current density, and corresponding potentials in N-shaped current-voltage characteristics for various resonant tunneling heterostructures. Results are based on the transient quantum drift-diffusion model. They are obtained by solving a coupled system of partial differential equations directly and, in contrast to previous analysis, no decoupling algorithms, procedures, or methods are used.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
References
Sze, S.M.: Semiconductor Devices – Physics and Technology. Wiley, New York (1985)
Shur, M.: Physics of Semiconductor Devices. Prentice Hall, Englewood Cliffs (1990)
Yu, P.Y., Cardona, M.: Fundamentals of Semiconductors – Physics and Materials Properties. Springer, Heidelberg (1996)
Scholl, E.: Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors. Cambridge University Press, Cambridge (2001)
Ancona, M.G.: Diffusion-Drift Modeling of Strong Inversion Layers. COMPEL 6, 11–18 (1987)
Ancona, M.G., Tiersten, H.F.: Macroscopic Physics of the Silicon Inversion Layer. Phys. Rev. B 35(15), 7959–7965 (1987)
Ancona, M.G., Iafrate, G.J.: Quantum Correction to the Equation of State of an Electron Gas in a Semiconductor. Phys. Rev. B 39(13), 9536–9540 (1989)
Pinnau, R., Unterreiter, A.: The Stationary Current-Voltage Characteristics of the Quantum Drift-Diffusion Model. SIAM J. Numer. Anal. 37(1), 211–245 (1999)
Pinnau, R.: The Linearized Transient Quantum Drift-diffusion Model – Stability of Stationary States. ZAMM 80(5), 327–344 (2000)
Pinnau, R.: Numerical Approximation of the Transient Quantum Drift-Diffusion Model. Nonlinear Analysis 47, 5849–5860 (2001)
Pinnau, R.: A Note on Boundary Conditions for Quantum Hydrodynamic Equations. Appl. Math. Lett. 12, 77–82 (1999)
Markowich, P.A., Ringhofer, C.A.: Stability of the Linearized Transient Semiconductor Device Equations. ZAMM 67(7), 319–332 (1987)
Markowich, P.A., Ringhofer, C.A., Schmeiser, C.: Semiconductor Equations. Springer, Wien (1991)
Mock, M.S.: Analysis of Mathematical Models of Semiconductor Devices. Boole Press, Dublin (1983)
Selberherr, S.: Analysis and Simulation of Semiconductor Devices. Springer, Wien (1984)
Schatzman, M.: Numerical Analysis – A Mathematical Introduction. Clarendon Press, Oxford (2002)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2004 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Radulovic, N., Willatzen, M., Melnik, R.V.N. (2004). Resonant Tunneling Heterostructure Devices – Dependencies on Thickness and Number of Quantum Wells. In: Laganá, A., Gavrilova, M.L., Kumar, V., Mun, Y., Tan, C.J.K., Gervasi, O. (eds) Computational Science and Its Applications – ICCSA 2004. ICCSA 2004. Lecture Notes in Computer Science, vol 3045. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-24767-8_86
Download citation
DOI: https://doi.org/10.1007/978-3-540-24767-8_86
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-22057-2
Online ISBN: 978-3-540-24767-8
eBook Packages: Springer Book Archive