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Surface Roughening in Homoepitaxial Growth: A Lattice Gas Cellular Automaton Model

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Cellular Automata (ACRI 2004)

Part of the book series: Lecture Notes in Computer Science ((LNCS,volume 3305))

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Abstract

We study the structural evolution of a growing thin film on time scales in the order of seconds and even minutes. This requires solving the problem of bridging large time and length scale gaps in simulating atomistic processes during thin film deposition. We describe a new simulation approach inspired by lattice gas cellular automata to address this problem. The approach is based on a discrete description of atoms so that the unit length scale coincides with the atomic diameter. For homoepitaxial thin film deposition, the local driving force is the propensity of an atom to establish as many chemical bonds as possible to the underlying substrate atoms when it executes surface diffusion. The interaction between atoms is defined using a coarse-grained approach to boost the computation speed without heavily sacrificing the atomistic details. Simulation results of Si layers deposited on a Si(001) substrate are presented.

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Author information

Authors and Affiliations

  1. FB Mathematik und Informatik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle (Saale), Germany

    A. Gerisch

  2. Dept. of Mathematics and Statistics, University of Guelph, Guelph, ON, N1G 2W1, Canada

    A. T. Lawniczak

  3. Dept. of Mechanical and Manufacturing Engineering, University of Calgary, Calgary, AL, T2N 1N4, Canada

    R. A. Budiman

  4. Dept. of Mathematics, Brock University St. Catharines, ON, L2S 3A1, Canada

    H. Fukś

  5. Dept. of Materials Science and Engineering, University of Toronto, Toronto, ON, M5S 3E3, Canada

    H. E. Ruda

Authors
  1. A. Gerisch
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  2. A. T. Lawniczak
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  3. R. A. Budiman
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  4. H. Fukś
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  5. H. E. Ruda
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Editor information

Editors and Affiliations

  1. Faculty of Sciences, Section of Computational Science, University of Amsterdam, Kruislaan 403, 1098 SJ, Amsterdam, The Netherlands

    Peter M. A. Sloot

  2. Computer Science Department, University of Geneva, Switzerland

    Bastien Chopard

  3. Section Computational Science, University of Amsterdam, The Netherlands

    Alfons G. Hoekstra

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© 2004 Springer-Verlag Berlin Heidelberg

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Gerisch, A., Lawniczak, A.T., Budiman, R.A., Fukś, H., Ruda, H.E. (2004). Surface Roughening in Homoepitaxial Growth: A Lattice Gas Cellular Automaton Model. In: Sloot, P.M.A., Chopard, B., Hoekstra, A.G. (eds) Cellular Automata. ACRI 2004. Lecture Notes in Computer Science, vol 3305. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-30479-1_30

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  • DOI: https://doi.org/10.1007/978-3-540-30479-1_30

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-23596-5

  • Online ISBN: 978-3-540-30479-1

  • eBook Packages: Springer Book Archive

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