The quantized Hall effect (QHE) was discovered early in February 1980, when Klaus von Klitzing performed a series of experiments at the high-field magnetlaboratories in Grenoble, France, in order to investigate the transport properties of silicon based metal-oxide-semiconductor field-effect-transistors (MOSFET’s), which up to now form the basic building blocks of highest-integrated electrical circuits. The aim was to improve on the mobility of charge carriers in these devices. This requires to understand, which kind of scattering processes (caused by surface roughness, interface charges, impurities, etc.) has the strongest effect on the motion of the ►electrons in the thin conducting layer at the interface between silicon and silicon-oxide, which is only a few nanometers thick.
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Gerhardts, R.R., Weis, J., von Klitzing, K. (2009). Quantum Hall Effect. In: Greenberger, D., Hentschel, K., Weinert, F. (eds) Compendium of Quantum Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-70626-7_167
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