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A Monte Carlo Model of Piezoelectric Scattering in GaN

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Numerical Methods and Applications (NMA 2006)

Part of the book series: Lecture Notes in Computer Science ((LNTCS,volume 4310))

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Abstract

A non-parabolic piezoelectric model of electron-phonon interaction in Gallium Nitride is discussed. The Monte Carlo aspects of the model, needed for the simulation tools which provide the characteristics of GaN-based devices are analyzed in details. The piezo-scattering rate is derived by using quantum-mechanical considerations. The angular dependence is avoided by a proper spherical averaging and the non-parabolicity of the bands is accounted for. For the selection of the after-scattering state we deploy the rejection technique. The model is implemented in a simulation software. We employ a calibrated experimentally verified set of input material parameters to obtain valuable data for the transport characteristics of GaN. The simulation results are in good agreement with experimental data available for different physical conditions.

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Authors and Affiliations

  1. Advanced Materials and Device Analysis Group, Inst. for Microelectronics, TU Wien, Gusshausstrasse 27-29, A-1040 Vienna, Austria

    S. Vitanov, M. Nedjalkov & V. Palankovski

Authors
  1. S. Vitanov
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  2. M. Nedjalkov
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  3. V. Palankovski
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Todor Boyanov Stefka Dimova Krassimir Georgiev Geno Nikolov

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© 2007 Springer Berlin Heidelberg

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Vitanov, S., Nedjalkov, M., Palankovski, V. (2007). A Monte Carlo Model of Piezoelectric Scattering in GaN. In: Boyanov, T., Dimova, S., Georgiev, K., Nikolov, G. (eds) Numerical Methods and Applications. NMA 2006. Lecture Notes in Computer Science, vol 4310. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-70942-8_23

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  • DOI: https://doi.org/10.1007/978-3-540-70942-8_23

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-70940-4

  • Online ISBN: 978-3-540-70942-8

  • eBook Packages: Computer ScienceComputer Science (R0)

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