A Low Power SRAM Based on Five Transistors Cell

Abstract

This paper proposes a low power SRAM based on five transistor SRAM cell. Proposed SRAM uses novel word-line decoding such that, during a read/write operation, only selected cell is connected to bit-line when one row is selected whereas, in conventional SRAM (CV-SRAM), all cells in selected row connected to their bit-lines, which in turn develops differential voltages across all bit-lines, and this makes energy consumption on unselected bit-lines. Proposed SRAM uses one bit-line and thus has lower bit-line leakage compared to CV-SRAM. Furthermore, the proposed SRAM incurs no area overhead, and has comparable read/write performance versus the CV-SRAM. Simulation results in standard 0.25μm CMOS technology shows in worst case proposed SRAM has on average 80% smaller energy consumption in each cycle compared to CV-SRAM. Besides, energy consumption in each cycle of proposed SRAM and CV-SRAM investigated analytically, the results of which are in good agreement with the simulation results.