Abstract
In this work we investigate self-heating effects in nanowire FETs. We find that, as in the case of FD SOI devices, the velocity overshoot effect of the carriers in the channel and reduced number of scattering events with phonons lead to smaller ON-current degradation in short compared to long channel nanowire transistors.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
References
Li, D., Wu, Y., Kim, P., Shi, L., Yang, P., Majumdar, A.: Thermal conductivity of individual silicon nanowires. Appl. Phys. Lett. 83, 2934–2936 (2003)
Mingo, N.: Calculation of Si nanowire thermal conductivity using complete dispersion relation. Physical Review, B 68, 113–308 (2003)
Raleva, K., Vasileska, D., Goodnick, S.M., Nedjalkov, M.: Modeling Thermal Effects in Nanodevices. IEEE Trans. on Elec. Devices 55(6), 1306 (2008)
Vasileska, D., Raleva, K., Goodnick, S.M.: Self-Heating Effects in Nano-Scale FD SOI Devices: The Role of the Substrate, Boundary Conditions at Various Interfaces and the Dielectric Material Type for the BOX. IEEE Trans. Electron Devices 56(12), 3064–3071 (2009)
Vasileska, D., Raleva, K., Goodnick, S.M.: Electrothermal Studies of FD SOI Devices That Utilize a New Theoretical Model for the Temperature and Thickness Dependence of the Thermal Conductivity. IEEE Transactions on Electron Devices 57, 726–728 (2010)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2011 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Vasileska, D., Hossain, A., Raleva, K., Goodnick, S.M. (2011). Is Self-Heating Important in Nanowire FETs?. In: Dimov, I., Dimova, S., Kolkovska, N. (eds) Numerical Methods and Applications. NMA 2010. Lecture Notes in Computer Science, vol 6046. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18466-6_13
Download citation
DOI: https://doi.org/10.1007/978-3-642-18466-6_13
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-18465-9
Online ISBN: 978-3-642-18466-6
eBook Packages: Computer ScienceComputer Science (R0)