Abstract
We investigate self-heating effects in single-gate and dual-gate device structures and structures that have AlN (aluminum nitride) and diamond as a buried oxide layer. We also investigate both electrical and thermal enhancement and degradation respectively, due to self-heating effects in fully-depleted SOI devices that have arbitrary transport and crystallographic direction. Our simulation analysis suggests that in all these alternative device technologies self-heating is dramatically reduced in short channel devices due to the pronounced velocity overshoot effect. Moreover, the use of AlN and diamond as a buried oxide layer further reduces the current degradation due to self heating to insignificant values because of the drastic reduction of the thermal resistance of the buried oxide layer.
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Raleva, K., Vasileska, D., Goodnick, S.M. (2011). Self-Heating Effects in High Performance Devices. In: Gusev, M., Mitrevski, P. (eds) ICT Innovations 2010. ICT Innovations 2010. Communications in Computer and Information Science, vol 83. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-19325-5_12
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DOI: https://doi.org/10.1007/978-3-642-19325-5_12
Publisher Name: Springer, Berlin, Heidelberg
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