Abstract
The most efficient power saving method in digital systems is to scale Vdd, owing to the quadratic dependence of dynamic power consumption. This requires memory working under a wide range of Vdds in terms of performance and power saving requirements. A self-timed 6T SRAM was previously proposed, which adapts to the variable Vdd automatically. However due to leakage, the size of memory is restricted by process variations. This paper reports a new self-timed 10T SRAM cell with bit line keepers developed to improve robustness in order to work in a wide range of Vdds down to 0.3V under PVT variations. In addition, this paper briefly discusses the potential benefits of the self-timed SRAM for designing highly reliable systems and detecting the data retention voltage (DRV).
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Baz, A., Shang, D., Xia, F., Yakovlev, A., Bystrov, A. (2011). Improving the Robustness of Self-timed SRAM to Variable Vdds. In: Ayala, J.L., GarcÃa-Cámara, B., Prieto, M., Ruggiero, M., Sicard, G. (eds) Integrated Circuit and System Design. Power and Timing Modeling, Optimization, and Simulation. PATMOS 2011. Lecture Notes in Computer Science, vol 6951. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-24154-3_4
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DOI: https://doi.org/10.1007/978-3-642-24154-3_4
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