Abstract
Significant progress in integrated circuits performance has been supported by the miniaturization of the transistor feature size. With transistor scalability gradually slowing down new concepts have to be introduced in order to maintain the computational speed increase at reduced power consumption for future micro- and nanoelectronic devices. A promising alternative to the charge degree of freedom currently used in MOSFET switches is to take into account the spin degree of freedom. We computationally investigate transport properties of ballistic spin field-effect transistors (SpinFETs). These simulations require a significant amount of computational resources. To achieve the best performance of calculations we parallelize the code for a shared-memory multi-CPU system. As the result of the optimization of the whole model a significant speed-up in calculations is achieved. We demonstrate that the [100] oriented silicon fins are best suited for practical realizations of a SpinFET.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Datta, S., Das, B.: Electronic analog of the electro-optic modulator. Applied Physics Letters 56(7), 665–667 (1990)
Giglberger, S., Golub, L.E., Bel’kov, V.V., Danilov, S.N., Schuh, D., Gerl, C., Rohlfing, F., Stahl, J., Wegscheider, W., Weiss, D., Prettl, W., Ganichev, S.D.: Rashba and Dresselhaus spin splittings in semiconductor quantum wells measured by spin photocurrents. Phys. Rev. B 75(3), 35327 (2007)
Nestoklon, M.O., Ivchenko, E.L., Jancu, J.-M., Voisin, P.: Electric field effect on electron spin splitting in SiGe/Si quantum wells. Phys. Rev. BÂ 77(15), 155328 (2008)
Prada, M., Klimeck, G., Joynt, R.: Spin-orbit splittings in Si/SiGe quantum wells: from ideal Si membranes to realistic heterostructures. New J. Phys. 13, 13009 (2011)
Wilamowski, Z., Jantsch, W.: Suppression of spin relaxation of conduction electrons by cyclotron motion. Phys. Rev. BÂ 69(3), 35328 (2004)
Cahay, M., Bandyopadhyay, S.: Phase-coherent quantum mechanical spin transport in a weakly disordered quasi-one-dimensional channel. Phys. Rev. BÂ 69(4), 45303 (2004)
Jiang, K.M., Zhang, R., Yang, J., Yue, C.-X., Sun, Z.-Y.: Tunneling magnetoresistance properties in ballistic spin field-effect transistors. IEEE T-EDÂ 57, 2005 (2010)
GNU Scientific Library, http://www.gnu.org/s/gsl/
Karner, M., Gehring, A., Holzer, S., Pourfath, M., Wagner, M., Gös, W., Vasicek, M., Baumgartner, O., Kernstock, C., Schnass, K., Zeiler, G., Grasser, T., Kosina, H., Selberherr, S.: A multi-purpose Schrödinger-Poisson solver for TCAD applications. Journal of Computational Electronics 6, 179–182 (2007)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2012 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2012). Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins. In: Lirkov, I., Margenov, S., Waśniewski, J. (eds) Large-Scale Scientific Computing. LSSC 2011. Lecture Notes in Computer Science, vol 7116. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-29843-1_72
Download citation
DOI: https://doi.org/10.1007/978-3-642-29843-1_72
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-29842-4
Online ISBN: 978-3-642-29843-1
eBook Packages: Computer ScienceComputer Science (R0)