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Simulation Study of an Ultra Thin Body Silicon On Insulator Tunnel Field Effect Transistor

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Progress in VLSI Design and Test

Part of the book series: Lecture Notes in Computer Science ((LNTCS,volume 7373))

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Abstract

This paper presents a modified UTB SOI TFET structure and a thorough simulation study of various device design parameters on this structure.

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References

  1. Choi, W.Y., Park, B.-G., Lee, J.D., Liu, T.-J.K.: Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec. IEEE Electron Device Letters 28(8) (August 2007)

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  2. Gandhi, R., Chen, Z., Singh, N., Banerjee, K.: Vertical Si-Nanowire n-Type Tunneling FETs With Low Subthreshold Swing (≤ 50 mV/decade) at Room Temperature. IEEE Electron Device Letters 32(4) (April 2011)

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Author information

Authors and Affiliations

  1. Bengal Engineering and Science University, Howrah, West Bengal, India

    Partha Sarathi Gupta, Sayan Kanungo & Hafizur Rahaman

  2. Indian Institute of Management Calcutta, India

    Partha Sarathi Dasgupta

Authors
  1. Partha Sarathi Gupta
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  2. Sayan Kanungo
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  3. Hafizur Rahaman
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  4. Partha Sarathi Dasgupta
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Editor information

Editors and Affiliations

  1. Department of Information Technology, Bengal Engineering and Science University Shibpur, P.O. Botanic Garden, 711103, Howrah, India

    Hafizur Rahaman

  2. Department of Electronic Science, University of Calcutta, 92, A.P.C. Road, 700009, Kolkata, India

    Sanatan Chattopadhyay

  3. Department of Electronics and Electrical Comm. Engg., Indian Institute of Technology Kharagpur, 721302, West Bengal, India

    Santanu Chattopadhyay

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© 2012 Springer-Verlag Berlin Heidelberg

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Gupta, P.S., Kanungo, S., Rahaman, H., Dasgupta, P.S. (2012). Simulation Study of an Ultra Thin Body Silicon On Insulator Tunnel Field Effect Transistor. In: Rahaman, H., Chattopadhyay, S., Chattopadhyay, S. (eds) Progress in VLSI Design and Test. Lecture Notes in Computer Science, vol 7373. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-31494-0_51

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  • DOI: https://doi.org/10.1007/978-3-642-31494-0_51

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-31493-3

  • Online ISBN: 978-3-642-31494-0

  • eBook Packages: Computer ScienceComputer Science (R0)

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