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Reliability of 3D NAND Flash Memories

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3D Flash Memories

Abstract

In this chapter the main reliability mechanisms affecting 3D NAND memories will be addressed, providing a comparison between 3D FG and 3D CT devices in terms of reliability and expected performances. Starting from an analysis of basic reliability issues related to both physical and architectural aspects affecting NAND memories, the specific physical mechanisms impacting the reliability of 2D CT NAND will be addressed. Then, a review of the main problems experimentally observed in different 3D CT cell concepts is reported. Finally, 3D FG memory concept is briefly introduced in order to understand the related reliability implications, and a comparison between 3D CT and 3D FG arrays is provided in terms of reliability and expected performances.

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Authors and Affiliations

  1. Dipartimento di Ingegneria, Università degli Studi di Ferrara, Ferrara, Italy

    A. Grossi, C. Zambelli & P. Olivo

Authors
  1. A. Grossi
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  2. C. Zambelli
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  3. P. Olivo
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Corresponding author

Correspondence to A. Grossi .

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Editors and Affiliations

  1. Microsemi Corporation, Performance Storage BU, Vimercate, Italy

    Rino Micheloni

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Grossi, A., Zambelli, C., Olivo, P. (2016). Reliability of 3D NAND Flash Memories. In: Micheloni, R. (eds) 3D Flash Memories. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-7512-0_2

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  • DOI: https://doi.org/10.1007/978-94-017-7512-0_2

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  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-017-7510-6

  • Online ISBN: 978-94-017-7512-0

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