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RRAM Cross-Point Arrays

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3D Flash Memories

Abstract

In the age of Big Data, it has been always a dream for researchers to find the next generation nonvolatile memory with higher density, lower latency and lower cost. As a matter of fact, the last mainstream memory, NAND Flash memory, was created decades ago. Nowadays, NAND Flash memory, based on metal-oxide-semiconductor field-effect-transistor with an additional floating gate, is still one of the most popular nonvolatile memories. However, its speed and density are now approaching the physical limits of its basic structure. It takes longer than 1μsec to store electrons into the floating gate (Lee et al. in Two series oxide resistors applicable to high speed and high density nonvolatile memory. Adv Mater 19(22):3919–3923, 2007, [1]), and it seems impossible to scale planar technologies below 10 nm. This is not only due to the cost of lithography, but also to the crosstalk and parasitic effects caused by the thick gate. In fact, to make sure that electrons don’t leak away from the floating gate, gate thickness can’t be too thin. Moreover, since the number of electrons trapped inside the floating gate is less than 100 at 20 nm, losing few electrons can cause severe reliability issues (Sung and Hagop in Next generation nonvolatile memory, its impact on computer system (Resources of Crossbar Company), [2]).

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Authors and Affiliations

  1. Institute of Microelectronics, Tsinghua University, Beijing, China

    Huaqiang Wu, Yan Liao, Bin Gao & He Qian

  2. Micron Technology Inc., Boise, USA

    Debanjan Jana

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  1. Huaqiang Wu
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  2. Yan Liao
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  3. Bin Gao
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  4. Debanjan Jana
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  5. He Qian
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Correspondence to Huaqiang Wu .

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Editors and Affiliations

  1. Microsemi Corporation, Performance Storage BU, Vimercate, Italy

    Rino Micheloni

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Wu, H., Liao, Y., Gao, B., Jana, D., Qian, H. (2016). RRAM Cross-Point Arrays. In: Micheloni, R. (eds) 3D Flash Memories. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-7512-0_8

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  • DOI: https://doi.org/10.1007/978-94-017-7512-0_8

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