Abstract
With the increase in demand for high-performance ICs for both memory and logic applications, scaling has been continued down to 14 nm node. To meet the performance requirements, high-k dielectrics such as HfO\(_2\), ZrO\(_2\) have replaced SiO\(_2\) in the conventional MOS structure for sub-45 nm node. Correspondingly, the polysilicon gate electrode has been replaced by metal gate electrode in order to enable integration with high-k. Furthermore, the standard silicon substrate has been replaced by high mobility substrate in order to obtain desired transistor performance. While the fabrication technology for CMOS has advanced rapidly the traditional design tools used for designing circuits continues to use conventional MOS structure and their properties. This paper aims to analyze frequency response of CMOS common source amplifier(CSA) and differential amplifier by simulating in MATLAB using metal gate/high-k/Ge structure and to compare with traditionally used amplifier design using standard MOS structure.
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Anand, D., Swathi, M., Purushothaman, A., Gopalan, S. (2018). Assessing the Performance of CMOS Amplifiers Using High-k Dielectric with Metal Gate on High Mobility Substrate. In: Singh, M., Gupta, P., Tyagi, V., Flusser, J., Ören, T. (eds) Advances in Computing and Data Sciences. ICACDS 2018. Communications in Computer and Information Science, vol 905. Springer, Singapore. https://doi.org/10.1007/978-981-13-1810-8_28
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DOI: https://doi.org/10.1007/978-981-13-1810-8_28
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