Abstract
This study focuses on the optimization of fabricated 1 µm gate length depletion-mode double δ-doped In0.3Al0.7As/ In0.7Ga0.3As/InP depletion-mode pHEMT using SILVACO ATLAS TCAD simulator. Physical modelling of the pHEMT devices is required to further understand the effect of the parameters and structures on the device performance, which incorporated a highly tensile In0.3Al0.7As barrier and compressive In0.7Ga0.3As channel. The work starts with developing a base model from the fabricated device DC characteristic such as I-V curves by inverse modelling and matching simulated results with measured results. Finally, to study the effects of channel layer thicknesses and gate length variations, the models are simulated, and the corresponding I-V curves are compared to the base model. Hence, by increasing the channel layer thickness by 15% from its original thickness and reducing the 1 um gate length by 60%, the channel layer and gate length were successfully simulated and agreed well with the measured results.
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Acknowledgement
This work was funded by Universiti Sains Malaysia’s Research University Incentive (RUI) grant 1001/PELECT/8014134. The corresponding author of this work would like to thank Professor M.Missous from the School of Electrical and Electronic Engineering at The University of Manchester for providing the lab to fabricate XMBE210 device. Thanks also to Ir. Dr. Alhan Farhanah Abd Rahim from Faculty of Electrical Engineering at the Universiti Teknologi MARA Permatang Pauh for providing the Silvaco Lab for the simulation.
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Ikhwan, N.I.M. et al. (2022). 2D Physical Modelling of Double δ-Doped pHEMT with Tensile InAlAs Barrier and Compressive InGaAs Channel. In: Mahyuddin, N.M., Mat Noor, N.R., Mat Sakim, H.A. (eds) Proceedings of the 11th International Conference on Robotics, Vision, Signal Processing and Power Applications. Lecture Notes in Electrical Engineering, vol 829. Springer, Singapore. https://doi.org/10.1007/978-981-16-8129-5_135
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DOI: https://doi.org/10.1007/978-981-16-8129-5_135
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