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Design of High-Power Power Amplifiers for BDS-3 Terminal Based on InGaP/GaAs HBT MMIC and LGA Technology

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Computer Networks and IoT (IAIC 2023)

Part of the book series: Communications in Computer and Information Science ((CCIS,volume 2060))

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Abstract

With the development and popularization of Beidou-3 navigation satellite system (BDS-3), to ensure its unique short message function it is necessary to integrate a radio frequency (RF) power amplifier (PA) with high performance. Therefore, in this paper, an L-band high-power 10 W PA chip is designed in InGaP/GaAs heterojunction bipolar transistor (HBT) technology combined with temperature-insensitive adaptive bias technology, class-F harmonic suppression technology, and LGA packaging technology. The linear gain of the PA chip reaches 37.1 dB and P1dB reaches 40.6 dBm. The results show that the PA chip has high power, high gain, and high linearity, which has obvious advantages over similar PA chip designs and can meet the short message functions of the BDS-3 terminals in various application scenarios.

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Author information

Authors and Affiliations

  1. School of Information and Communication Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan, People’s Republic of China

    Zhenbing Li, Shilin Jia, Jinrong Zhang, Jialong Fu, Junjie Huang & Guangjun Wen

  2. Antennas and Electromagnetics Research Group, School of Electronic Engineering and Computer Science, Queen Mary University of London, London, E1 4NS, UK

    Xiaochuan Fang

  3. School of Information and Software Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan, People’s Republic of China

    Gang Li

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  1. Zhenbing Li
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  2. Shilin Jia
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  3. Jinrong Zhang
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  4. Jialong Fu
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  5. Junjie Huang
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  6. Xiaochuan Fang
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  7. Gang Li
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  8. Guangjun Wen
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Corresponding author

Correspondence to Guangjun Wen .

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Editors and Affiliations

  1. Huazhong University of Science and Technology, Wuhan, Hubei, China

    Hai Jin

  2. Chinese Academy of Science, Shenzhen, China

    Yi Pan

  3. Nanjing University of Science and Technology, Nanjing, China

    Jianfeng Lu

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Li, Z. et al. (2024). Design of High-Power Power Amplifiers for BDS-3 Terminal Based on InGaP/GaAs HBT MMIC and LGA Technology. In: Jin, H., Pan, Y., Lu, J. (eds) Computer Networks and IoT. IAIC 2023. Communications in Computer and Information Science, vol 2060. Springer, Singapore. https://doi.org/10.1007/978-981-97-1332-5_9

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  • DOI: https://doi.org/10.1007/978-981-97-1332-5_9

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-97-1331-8

  • Online ISBN: 978-981-97-1332-5

  • eBook Packages: Computer ScienceComputer Science (R0)

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