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Enhance the AlGaN/GaN HEMTs Device Breakdown Voltage by Implementing Field Plate: Simulation Study

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Proceedings of the 12th International Conference on Robotics, Vision, Signal Processing and Power Applications (RoViSP 2021)

Abstract

Recently, the features of AlGaN/GaN high electron mobility transistors (HEMTs) known as breakdown voltage (BV) have garnered a lot of interest for RF and Power applications. But due to the electric field and current collapse, the breakdown voltage of the GaN HEMTs device is reduced. Therefore, in this research, the field plate technique has been studied for enhancing the GaN HEMTs device breakdown voltage by using Silvaco TCAD software. It's observed that the dual field plate has shown a higher breakdown voltage around 1100 V, whereas the gate field plate and source field plate have illustrated a breakdown voltage of 820 and 1000 V approximately. Subsequently, GaN HEMTs presented a threshold voltage (VTH) of − 3.3 V and transconductance (GM) of 16.3 mS/mm approximately.

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Acknowledgements

This research was funded by Universiti Sains Malaysia Research University Incentive (RUI) grant “1001/PELECT/8014134”. The authors would like to express his gratitude to USM School of Electrical and Electronic Engineering, CEDEC, and INOR for providing research facilities, also to University Technology MARA, Penang for SILVACO TCAD tool support.

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Correspondence to Mohamed Fauzi Packeer Mohamed .

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Islam, N. et al. (2024). Enhance the AlGaN/GaN HEMTs Device Breakdown Voltage by Implementing Field Plate: Simulation Study. In: Ahmad, N.S., Mohamad-Saleh, J., Teh, J. (eds) Proceedings of the 12th International Conference on Robotics, Vision, Signal Processing and Power Applications. RoViSP 2021. Lecture Notes in Electrical Engineering, vol 1123. Springer, Singapore. https://doi.org/10.1007/978-981-99-9005-4_17

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