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Simulation of Bottom-Gate Top-Contact Pentacene Based Organic Thin-Film Transistor Using MATLAB

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Proceedings of the 12th International Conference on Robotics, Vision, Signal Processing and Power Applications (RoViSP 2021)

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 1123))

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Abstract

Organic transistor plays an important role in electronic applications as it provides additional benefit of flexibility and low cost compared to silicon electronic devices. Simulation and analytical model of such organic devices helps in improving and optimizing the performance of the device. There are various parameters that effect the performance of the device. In this work, analytical simulation of the organic device is performed based on the device physics to simulate the output characteristics using MATLAB for various channel length (L). Here, the impact on channel length is observed on varying the device length and its impact is observed on the drain current. Different channel length taken into consideration and the simulation result shows that the drain current increases when the channel length decreased. Thus, simulation of such analytical models helps in extracting the useful information about the performance of the organic transistors.

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Acknowledgements

This project was supported by “Ministry of Higher Education Malaysia for Fundamental Research Grant Scheme” with project code FRGS/1/2020/TKO/USM/02/2.

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Correspondence to Nor Azlin Ghazali .

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Wei, L.J., Ghazali, N.A. (2024). Simulation of Bottom-Gate Top-Contact Pentacene Based Organic Thin-Film Transistor Using MATLAB. In: Ahmad, N.S., Mohamad-Saleh, J., Teh, J. (eds) Proceedings of the 12th International Conference on Robotics, Vision, Signal Processing and Power Applications. RoViSP 2021. Lecture Notes in Electrical Engineering, vol 1123. Springer, Singapore. https://doi.org/10.1007/978-981-99-9005-4_19

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