Skip to main content
SpringerLink
Log in

The influence of photo-detector non-linearity on the multi-functionality of an opto-electronic cellular neural network

  • Published:
Neural Processing Letters Aims and scope Submit manuscript

Abstract

The multi-functionality of an opto-electronic cellular neural network (OECNN) is investigated in this paper. Investigations are carried out to see if the network can still perform as an image edge detector, noise remover, or shadow creator when its metal-semiconductor-metal photodiodes (MSMPDs) have a non-linear response and device variations (i.e. variation in sensitivity from one device to another). From HSPICE simulations, it was found that the edge detector is not affected by the MSMPD's non-linearity and tolerates 20% device variation. It was also found that by adjusting the cell's behaviour, the impact of the non-linearity on the noise remover is alleviated to an acceptable level and that the network can perform as a shadow creator and tolerates 40% device variation. This discovery means that the restriction on the fabrication method of the MSMPD may be significantly reduced, if the programmability of the OECNN can be limited.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. K.S. Hung, K.M. Curtis and J.W. Orton, “Optoelectronic implementation of a multi-function cellular neural network”, IEEE Trans. on Circuits and System-II, Vol. 43, pp 601–608, 1996.

    Google Scholar 

  2. Y. Nitta, J. Ohta, S. Tai and K. Kyuma, “Variable-sensitivity photodetector that uses a metal-semiconductor-metal structure for optical neural networks”, Optics Letters, Vol. 16, pp. 611–613, 1991.

    Google Scholar 

  3. E.H. Böttcher, D. Kuhl, F. Hieronymi et al., “Ultrafast semiinsulating InP:Fe-InGaAs:Fe-InP:Fe MSM photodetectors: modeling and performance”, IEEE Journal of Quantum Electronics, Vol. 28, pp. 2343–2357, 1992.

    Google Scholar 

  4. S.Y. Chou and M.Y. Liu, “Nanoscale Tera-Hertz metal-semiconductor-metal photodetectors”, IEEE Journal of Quantum Electronics, Vol. 28, pp. 2358–2368, 1992.

    Google Scholar 

  5. R.B. Darling, B. Nabet, J.E. Samaras et al., “Epitaxial n+ layer GaAs mesa-finger interdigital surface photodetectors”, IEEE Electron Device Letters, Vol. 10, pp. 461–463, 1989.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, Nottingham University, NG7 2RD, Nottingham, UK

    Keng-Shen Hung, K. Mervyn Curtis & John W. Orton

Authors
  1. Keng-Shen Hung
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. K. Mervyn Curtis
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. John W. Orton
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Hung, KS., Curtis, K.M. & Orton, J.W. The influence of photo-detector non-linearity on the multi-functionality of an opto-electronic cellular neural network. Neural Process Lett 4, 119–125 (1996). https://doi.org/10.1007/BF00426020

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00426020

Key words

Search

Navigation